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BusinessWire Biotech
Original article

Toshiba推出具備高突波電流能力的3300V SiC MOSFET模組,協助提升工業設備可靠性

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Summary

Toshiba announced the launch of a dual SiC MOSFET module (IX800FXF2YMS4) with 3300V ratings and 800A DC current capacity, featuring enhanced inrush current capability for industrial applications including railway vehicles, renewable energy systems, and power conversion equipment.

Importance:2/10
Sentiment:
0.30
SiC MOSFETPower SemiconductorIndustrial EquipmentProduct LaunchTechnology Development

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Published by BusinessWire Biotech on September 25, 2026 3:57 AM

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